Microchip – 1200V Silicon Carbide Schottky Diodes

Silicon Carbide (SiC) Schottky Diodes offer superior dynamic and thermal performance over conventional Silicon power diodes.

SiC Schottky Diode Features
– Essentially zero forward and reverse recovery = reduced switch and diode switching losses
– Temperature independent switching behavior = stable high temperature performance
– Positive temperature coefficient of VF = ease of parallel operation
– Usable 175°C Junction Temperature = safely operate at higher temperatures

SiC Schottky Diode Benefits

– Improved System Efficiency
– Higher Reliability
– Lower System Switching Losses
– Lower System Cost & Reduced System Size
– Smaller EMI Filter
– Smaller Magnetic Components
– Smaller Heat-Sink
– Smaller Switches, Eliminate Snubbers