Avalanche Photodiodes (APDs)

An Avalanche Photodiode (APD) is a photodetector that provides a built-in first stage of gain via avalanche multiplication. Provision of this internal signal gain is what differentiates an APD from a PIN photodiode.

An APD provides higher sensitivity and so is ideal for extreme low-level light detection and photon counting. Available as Silicon or InGaAs photodiodes, these devices detect in the 400nm – 1100nm range. Multiple configurations are available to provide a wide range of sensitivity and speed options.

The use of avalanche photodiodes instead of PIN photodetectors will result in improved sensitivity – useful in applications where the noise of the amplifier is high i.e. much higher than the noise in the photodetector.


New C30733 Series Avalanche Photodiodes – High Speed, High Gain

New from Excelitas is the C30733 Series of high speed, high gain, low noise lnGaAs APDs. The C30733 provides high quantum efficiency (QE), high responsivity, low noise and fast recovery in the spectral range between 1000 nm and 1700 nm.

This unique combination of high gain and fast recovery time, coupled with low noise performance, makes it an ideal solution for high-end test equipment where extremely fast response and recovery time is required. Its ability to operate at very high gain with low noise performance fundamentally improves the signal to noise ratio and enables the detection of very low signals and small changes in fiber integrity for testing over long fiber telecom networks with high precision.


InGAas APDs

Features
Part Number C30644EHC30645EHC30645EH-1C30645ECERHC30645L
Description InGaAs APD TO-18InGaAs Avalanche Photodiodes Series, TO-18InGaAs Avalanche Photodiodes Series, TO-18, Small aperture, SiliconInGaAs Avalanche Photodiodes Series, Ceramic carrierInGaAs Avalanche Photodiodes Series, SMD LLC
Supplier ExcelitasExcelitasExcelitasExcelitasExcelitas
Package TO-18 TO-18 TO-18, Small aperture, Silicon Ceramic carrier SMD LLC
Active Diameter µm 50 80 80 80 80
Capacitance Pf 0.6 1.25 1.25 1.25 1.25
Typical BW MHz 2000 > 1000 > 1000 > 1000 > 1000
Dark Current nA 25 3 3 3 3
Breakdown Voltage 45-70 45-70 45-70 45-70 45-70
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Features
Part Number C30662EHC30662EH-1C30662ECERHC30662EH-3C30662L
Description InGaAs Avalanche Photodiodes Series, TO-18, Large aperture, GlassInGaAs Avalanche Photodiodes Series, TO-18, Large aperture, GlassInGaAs Avalanche Photodiodes Series, Ceramic carrierInGaAs Avalanche Photodiodes Series, TO-18, Small aperture, GlassInGaAs Avalanche Photodiodes Series, SMD LLC
Supplier ExcelitasExcelitasExcelitasExcelitasExcelitas
Package TO-18, Large aperture, Glass TO-18, Large aperture, Glass Ceramic carrier TO-18, Small aperture, Glass SMD LLC
Active Diameter µm 200 200 200 200 200
Capacitance Pf 2.5 2.5 2.5 2.5 2.5
Typical BW MHz 850 850 850 850 850
Dark Current nA 45 45 45 45 45
Breakdown Voltage 45-70 45-70 45-70 45-70 45-70
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Features
Part Number C30617BHC30617L-100C30618GHC30618L-350C30619GH
Description InGaAs Avalanche Photodiodes Series, TO-18, ball lensInGaAs Avalanche Photodiodes Series, SMTInGaAs Avalanche Photodiodes Series, T0-18InGaAs Avalanche Photodiodes Series, SMTInGaAs Avalanche Photodiodes Series, TO-18 (Available with single cooler/dual cooler)
Supplier ExcelitasExcelitasExcelitasExcelitasExcelitas
Package TO-18, ball lens SMT T0-18 SMT TO-18 (Available with single cooler / dual cooler)
Active Diameter µm 100 100 350 350 TO-18 (Available with single cooler/dual cooler)
Capacitance Pf < 1.0 0.8 < 6.0 4.0 7
Typical BW MHz 3.5 3.5 0.75 0.75 350
Dark Current nA <1.0 <1.0 <1.0 <1.0 0.3
Breakdown Voltage 100 100 80 80 20
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Features
Part Number C30619GH-LCC30641GH / EHC30641GH-LCC30642GH-LCC30642GH
Description InGaAs Avalanche Photodiodes Series, TO-18InGaAs Avalanche Photodiodes Series, TO-18 (Available with single cooler/dual cooler)InGaAs Avalanche Photodiodes Series, TO-18InGaAs Avalanche Photodiodes Series, TO-5InGaAs Avalanche Photodiodes Series, TO-5
Supplier ExcelitasExcelitasExcelitasExcelitasExcelitas
Package TO-18 TO-18 (Available with single cooler / dual cooler) TO-18 TO-5 TO-5
Active Diameter µm TO-18 TO-18 (Available with single cooler/dual cooler) TO-18 TO-5 TO-5
Capacitance Pf 5 22 18 77 90
Typical BW MHz 700 75 150 40 20
Dark Current nA 0.3 1 1 2 2
Breakdown Voltage 20 20 20 15 15
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Features  
Part Number C30665GHC30665GH-LCC30723GH  
Description InGaAs Avalanche Photodiodes Series, TO-5 (Available with single cooler/dual cooler)InGaAs Avalanche Photodiodes Series, TO-5 InGaAs Avalanche Photodiodes Series, TO-8  
Supplier ExcelitasExcelitasExcelitas  
Package TO-5 (Available with single cooler / dual cooler) TO-5 TO-8   
Active Diameter µm TO-5 (Available with single cooler/dual cooler) TO-5 TO-8   
Capacitance Pf 200 165 950   
Typical BW MHz 10 20 3   
Dark Current nA 5 5 20   
Breakdown Voltage 10 10 10   
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Silicon APDs

Features
Part Number C30817EHC30884EHC30916EHC30902EHC30902SH
Description Si APD, 0.8mm, TO-5 Low-ProfileSi APD, 1mm, TO-5Si APD, 1.5mm, TO-5 Low-ProfileSi APD, 0.5mm, TO-18Si APD, 0.5mm, TO-18, Photon Counting
Supplier ExcelitasExcelitasExcelitasExcelitasExcelitas
Package TO-5 TO-5 TO-5 TO-18, flat window (available with built-in 905 nm filter) TO-18, flat window
Active Diameter (mm) 0.8 0.8 1.5 0.5 0.5
Typical nCapacitance pF 2 4 3 1.5 1.5
Typical Rise/Fall Time ns 2 1 3 0.4 0.4
Typical Dark nCurrent nA 50 < 75 100 7 7
Breakdown Voltage nmin V 300 190 315 185 185
Breakdown Voltage nmax V 475 290 490 260 260
Temp. nCoefficient V/°C 2.2 1.1 2.2 0.7 0.7
Typical nGain 120 100 80 250 80
Responsivity n900 nm A/W 18 63 50 66 110
Responsivity n1060 nm A/W 8 12 0.23 0.11
NEPn@900 nm fW/√Hz 20 13 20
Responsivity n800 nm A/W 135 128
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Features
Part Number C30902SH-DTCC30954EHC30955EHC30956EHC30954EH-TC
Description Si APD, 0.5mm, TO-66, Photon Counting, Dual-Stage CoolerSi APD, 0.8mm, TO-5 PackageSi APD, 1.5mm, TO-5 PackageSi APD, 3mm, TO-8 PackageSi APD, 0.8mm, TO-5 Package
Supplier ExcelitasExcelitasExcelitasExcelitasExcelitas
Package TO-8 flange TO-8 flange
Active Diameter (mm) 0.5 0.8 1.5 3.0 0.8
Typical nCapacitance pF 1.5 2 3 10 2
Typical Rise/Fall Time ns 0.4 2
Typical Dark nCurrent nA 1 50 100 100 8
Breakdown Voltage nmin V 185 300
Breakdown Voltage nmax V 260 475
Temp. nCoefficient V/°C 0.7 2.4
Typical nGain 250 120
Responsivity n800 nm A/W 128
Responsivity n900 nm A/W 110 75
Responsivity n1060 nm A/W 0.02 36 34 25 36
NEPn@900 nm fW/√Hz 0.2
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Features
Part Number C30955EH-TCC30927EH-01C30927EH-02C30927EH-03C30703FH
Description Si APD, 1.5mm, TO-5 PackageSi APD Quadrant – 1.5 mm – 1060 nmSi APD Quadrant – 1.5mm – 900 nmSi APD Quadrant – 1.5mm – 800 nmSi APD, 10x10mm, Flatpack
Supplier ExcelitasExcelitasExcelitasExcelitasExcelitas
Package TO-8 flange
Active Diameter (mm) 1.5
Typical nCapacitance pF 3
Typical Rise/Fall Time ns 2 3 3 3 5
Typical Dark nCurrent nA 15 25 25 25 250
Breakdown Voltage nmin V 315 275 275 275 275
Breakdown Voltage nmax V 490 425 425 425 425
Temp. nCoefficient V/°C 2.4
Typical nGain 100
Responsivity n900 nm A/W 70 62(@ 900 nm)
Responsivity n1060 nm A/W 34 15(@ 1060 nm)
NEPn@900 nm fW/√Hz 0.2 66 @ 1060 nm 16 @ 900 nm 18 @ 800 nm 40 (@530 nm)
Responsivity n800 nm A/W 55(@ 800 nm) 16 (@530 nm)
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