Silicone Carbide (SiC) Schottky MOSFETs offer superior dynamic and thermal performance over conventional Silicon power MosFETs. The table below summarizes the advantages of SiC vs Si power discretes.
Characteristics
SiC vs. Si
Results
Benefits
Breakdown Field
10x Higher
Lower On-Resistance
Higher efficiency
Band Gap
3x Higher
Higher operating temperature
Improved cooling
Thermal conductivity
3x Higher
Higher power density
Higher current capabilities
Positive Temperature coefficient
–
Self regulation
Easy paralleling
Temperature Independent switching behavior
–
Stable high temperature performance
Lower losses
Almost no Reverse Recovery charge
–
Lower switching losses
Higher switching capabilities
Higher performance
Features
Microsemi SiC MosFETs Advantages
– Best in Class RDS(on) vs Temperature: leads to lower switching losses as well as stability over the complete operating temperature range.
– Longest Short Circuit Withstand Rating: highest simple easy control circuit design
