Silicone Carbide (SiC) Schottky MOSFETs offer superior dynamic and thermal performance over conventional Silicon power MosFETs. The table below summarizes the advantages of SiC vs Si power discretes.
SiC vs. Si
Higher operating temperature
Higher power density
Higher current capabilities
Positive Temperature coefficient
Temperature Independent switching behavior
Stable high temperature performance
Almost no Reverse Recovery charge
Lower switching losses
Higher switching capabilities
Microsemi SiC MosFETs Advantages
- Best in Class RDS(on) vs Temperature: leads to lower switching losses as well as stability over the complete operating temperature range.
- Longest Short Circuit Withstand Rating: highest simple easy control circuit design
SiC technology delivers higher breakdown field strength and improved thermal conductivity compared to silicon material. This enables improved performance characteristics in parameters including zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability.
Microsemi has applied its extensive expertise in power semiconductor integration and packaging to develop its family of silicon carbide power modules that deliver outstanding levels of performance, reliability and overall quality. The modules also allow designers to shrink system size and weight, while reducing total systems costs.