MOS FETs
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Microchip - 1200V Silicon Carbide Power MOSFET
XProduct SKU: APT40SM120B-P
Silicone Carbide (SiC) Schottky MOSFETs offer superior dynamic and thermal performance over conventional Silicon power MosFETs. The table below summarizes the advantages of SiC vs Si power discretes.
| Characteristics | SiC vs. Si | Results | Benefits |
| Breakdown Field | 10x Higher | Lower On-Resistance | Higher efficiency |
| Band Gap | 3x Higher | Higher operating temperature | Improved cooling |
| Thermal conductivity | 3x Higher | Higher power density | Higher current capabilities |
| Positive Temperature coefficient | - | Self regulation | Easy paralleling |
| Temperature Independent switching behavior | - | Stable high temperature performance | Lower losses |
| Almost no Reverse Recovery charge | - | Lower switching losses Higher switching capabilities | Higher performance |
Features
Microsemi SiC MosFETs Advantages - Best in Class RDS(on) vs Temperature: leads to lower switching losses as well as stability over the complete operating temperature range. - Longest Short Circuit Withstand Rating: highest simple easy control circuit designCONTACT US FOR VOLUME PRICING
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Microchip - 1200V Silicon Carbide Power MOSFET Module
XProduct SKU: APTMC120AM08CD3AG
SiC technology delivers higher breakdown field strength and improved thermal conductivity compared to silicon material. This enables improved performance characteristics in parameters including zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability. Microsemi has applied its extensive expertise in power semiconductor integration and packaging to develop its family of silicon carbide power modules that deliver outstanding levels of performance, reliability and overall quality. The modules also allow designers to shrink system size and weight, while reducing total systems costs.
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