Diodes

Silicon Carbide (SiC) Schottky Diodes offer superior dynamic and thermal performance over conventional Silicon power diodes. SiC Schottky Diode Features - Essentially zero forward and reverse recovery = reduced switch and diode switching losses - Temperature independent switching behavior = stable high temperature performance - Positive temperature coefficient of VF = ease of parallel operation - Usable 175°C Junction Temperature = safely operate at higher temperatures SiC Schottky Diode Benefits - Improved System Efficiency - Higher Reliability - Lower System Switching Losses - Lower System Cost & Reduced System Size - Smaller EMI Filter - Smaller Magnetic Components - Smaller Heat-Sink - Smaller Switches, Eliminate Snubbers