EPC: ‘How to GaN’ Summer Webinar Series

Spend your summer at GaN Beach with EPC – at least virtually – learning how to maximize the performance of your designs with leading edge GaN FETs and ICs.

Our team of GaN Experts will be hosting a series of intensive webinar trainings focused on design techniques to achieve maximum performance in your GaN designs.

Each session will last one hour including time for Q&A sessions with our presenters and panelists.

This webinar series has now finished.

EPC How to GaN Webinar Schedule:

  • July 14, 2021-High-Performance Layout Techniques to Maximize GaN Device Performance
  • July 28, 2021-Gate Drivers for GaN FETs
  • August 11, 2021-Understanding the Impact of Dead-time, QRR, and COSS
  • August 25, 2021-Thermal Management of GaN FETs

All webinars will be held at 16:00 BST / 17:00 CET / 8:00AM PDT on the scheduled day.

Register, attend, and engage with the team to earn points towards prizes.

  • Earn 250 points or more over the course of the series and receive an advanced digital copy of the new book GaN Power Devices and Applications.
  • Earn the most points for an individual webinar and receive a $100 Amazon card or equivalent donation to the charity of your choice.
  • Earn the most points over the course of the series and receive a $500 Amazon card or equivalent donation to the charity of your choice.

GaN Power Design Webinar Series with EPC

We are hosting a series of free GaN Power Design webinars with Efficient Power Conversion (EPC) starting from 11th May 2021.

EPC webinars exhibit over 60 years of combined experience in advanced power management technology. From understanding critical design aspects to GaN power device reliability to identifying the value of GaN, EPC webinars help engineers in their next design and understand the nutshell advantages of GaN.

The webinars cover GaN Power Design in suitable applications such as automotive systems, motor drives, medical, satellites and high-density computing.

GaN Power Design Webinars:


The webinars will be presented by Marco Palma, Director, Motor Control Systems & Applications at EPC.


At the end of each session, there will be an opportunity for Q&As. However, to ensure your question will be covered efficiently, feel free to submit your question(s) below before the webinar or email danica.ngo@sssltd.com.

    Testing GaN to Failure to Create Devices More Robust Than Silicon

    Presenting the ‘Testing GaN to Failure to Create Devices More Robust Than Silicon’ webinar on January 26th at 16:00 GMT as part of EPC’s How to GaN series. This session will focus on the latest results of extensive reliability testing of eGaN FETs and ICs.

    What you will learn

    • A physics-based lifetime model with supporting evidence to project the lifetime of an eGaN device under gate stress over all voltages and temperature ranges.
    • A first-principles mathematical model to describe the dynamic RDS(on) effect in eGaN FETs from the basic physics of hot carrier scattering into surface traps. This model is most useful for predicting lifetimes over all voltages and temperatures in more complex mission profiles.
    • Field reliability data generated over a period of four years and 226 billion hours of operation, most of which are on vehicles or used in telecommunication base stations.

    Presenters and panelists will be available following the presentation for a live Q& A session.

    After registering, you will receive a confirmation email containing information about joining the webinar.

    All registrants will be entered for a chance to win a copy of GaN Transistors for Efficient Power Conversion, Third Edition.

    Click Here to Register Now

    ‘How to Gan’ Free Webinar Series from EPC

    EPC are hosting a free series of ‘How to GaN’ webinars beginning in May 2020. This educational series is designed to accelerate your learning curve for gallium nitride technology.

    Webinar 1: Why GaN is More Robust than Silicon Power MOSFETs

    Wednesday 6th May at 18:00

    Webinar 2: The 48 V Revolution: GaN for High Density Computing and Ultra-thin Laptops

    Wednesday 20th May at 18:00

    Webinar 3: 3 Ways GaN is Driving Changes in Automotive Systems

    Wednesday 20th May at 18:00

    Webinar 4: Easy Design Tips to Maximize Performance in Your GaN Designs

    Wednesday 3rd June at 18:00

    Efficient Power Conversion Corporation (EPC)

    Solid State Supplies is pleased to welcome Efficient Power Conversion Corporation (EPC) as a new addition to our product offering. EPC is headquartered in California, USA, and was founded by Dr Alex Lidow, co-inventor of the HEXFET and formerly CEO of International Rectifier.  

    EPC is the leader in Gallium Nitride (GaN) based power components; GaN is a wide bandgap semiconductor material which is ideally suited to displace conventional Silicon MOSFETs.

    Tom Freeman, Product Manager at Solid State Supplies said “wide band gap semiconductor technologies such as GaN promise to play a key role in the green energy revolution, increasing efficiency significantly over traditional Silicon. Our partnership with EPC allows us to engage with this fast-growing market which is critical to the future of the UK electronics industry”.

    The key advantages of GaN semiconductors over traditional silicon semiconductors are:

    • Lower on resistance giving lower conductance losses
    • Faster devices yielding fewer switching losses
    • Less capacitance resulting in fewer losses when charging/discharging devices
    • Less power required to drive the circuit
    • Smaller devices meaning less space is taken on the printed circuit board (PCB)
    • GaN is inherently significantly more resistant to radiation effects

    “Solid State Supplies’ knowledge of the market, along with their extensive history and proven successful track record for working with customers make them a perfect partner to represent EPC’s industry-leading, off-the-shelf eGaN FET and IC product line,” commented Nick Cataldo, EPC vice president of sales and marketing.

    For any enquiries, please contact Tom Freeman on +44 (0)1527 830800 or email Tom.Freeman@sssltd.com.

    About EPC

    EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

    Visit our web site: www.epc-co.com

    eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.