Microchip – 650V Silicon Carbide Shottky Diodes

Product Overview

Silicon Carbide (SiC) Schottky Diodes offer superior dynamic and thermal performance over conventional Silicon power diodes.

SiC Schottky Diode Features
– Essentially zero forward and reverse recovery = reduced switch and diode switching losses
– Temperature independent switching behavior = stable high temperature performance
– Positive temperature coefficient of VF = ease of parallel operation
– Usable 175°C Junction Temperature = safely operate at higher temperatures

SiC Schottky Diode Benefits

– Improved System Efficiency
– Higher Reliability
– Lower System Switching Losses
– Lower System Cost & Reduced System Size
– Smaller EMI Filter
– Smaller Magnetic Components
– Smaller Heat-Sink
– Smaller Switches, Eliminate Snubbers



Zero Recovery Silicon Carbide Schottky Diode 650V 10A T0-220

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Zero Recovery Silicon Carbide Schottky Diode 650V 20A T0-220

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Zero Recovery Silicon Carbide Schottky Diode 650V 30A T0-247

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