Microchip – 1200V Silicon Carbide Power MOSFET

Product Overview

Silicone Carbide (SiC) Schottky MOSFETs offer superior dynamic and thermal performance over conventional Silicon power MosFETs. The table below summarizes the advantages of SiC vs Si power discretes.


SiC vs. Si



Breakdown Field

10x Higher

Lower On-Resistance

Higher efficiency

Band Gap

3x Higher

Higher operating temperature

Improved cooling

Thermal conductivity

3x Higher

Higher power density

Higher current capabilities

Positive Temperature coefficient

Self regulation

Easy paralleling

Temperature Independent switching behavior

Stable high temperature performance

Lower losses

Almost no Reverse Recovery charge

Lower switching losses

Higher switching capabilities

Higher performance


Microsemi SiC MosFETs Advantages

– Best in Class RDS(on) vs Temperature: leads to lower switching losses as well as stability over the complete operating temperature range.
– Longest Short Circuit Withstand Rating: highest simple easy control circuit design



Silicon Carbide Power MOSFET 1200V 40A T0-247

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Silicon Carbide Power MOSFET 1200V 40A D3Pak

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Silicon Carbide Power MOSFET 1200V 40A SOT-227

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